由于大规模集成电路对硅单晶的质量要求十分严格,其中杂质碳的影响不容忽视。在工艺流程中,为了控制碳的污染,对多晶硅制备还原用电解净化氢气以及单晶硅制备所需的高纯氩气分别采用气相色谱法和浓缩色谱法测定量含碳组分。然而对工艺重要中间产品-SiHCl_3中有机物碳的质量控制犹关重要。
浩瀚色谱（山东）应用技术开发有限公司利用气相色谱仪对三氯氢硅中的氯硅烷进行了分析检测。用面积百分比法方便、准确、快速的对各种氯硅烷进行了定量分析,定量相对标准偏差小于3%。
名称：DC-550填充柱
规格：3m*3mm
使用温度：180°C
货号：20231112006
Due to the strict quality requirements for silicon single crystals in large-scale integrated circuits, the influence of impurity carbon cannot be ignored. In the process flow, in order to control carbon pollution, gas chromatography and concentration chromatography were used to determine the carbon content of high-purity argon gas required for the reduction of polycrystalline silicon and monocrystalline silicon, respectively. However, for important intermediate products in the process, SiHCl_ The quality control of organic carbon in the three is still crucial.
Haohan Chromatography (Shandong) Application Technology Development Co., Ltd. used a gas chromatograph to analyze and detect chlorosilane in trichlorosilane. The area percentage method was used for convenient, accurate, and rapid quantitative analysis of various chlorosilanes, with a relative standard deviation of less than 3%.
Name: DC-550 filled column
Specification: 3m * 3mm
Operating temperature: 180 ° C
Article number: 20231112006
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